Storage

A Content-Aware Block Placement Algorithm for Reducing PRAM Storage Bit Writes

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Executive Summary

Phase-change Random Access Memory (PRAM) is a promising storage-class memory technology that has the potential to replace flash memory and DRAM in many applications. Because individual cells in a PRAM can be written independently, only data cells whose current values differ from the corresponding bits in a write request need to be updated. Furthermore, when a block write request is received, the PRAM may contain many free blocks that are available for overwriting, and these free blocks will generally have different contents. For this reason, the number of bit programming operations required to write new data to the PRAM (and consequently power consumption and write bandwidth) depends on the location that is chosen to be overwritten.

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