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The authors report a 0.5-5 GHz, 2V Class B push-pull power amplifier in a through-wafer via Si/SiGe HBT process. The amplifier utilized a small, low loss, broadband balun and a coupled spiral inductor transformer. Power added efficiencies greater than 40% from 1 GHz to 4 GHz and greater than 30% from 0.5 to 5 GHz have been achieved. Small signal gain of greater than 13dB and maximum output power of 22 dBm were realized from 0.5 GHz to 4 GHz with a 2 V supply voltage.
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