A Low Active Leakage and High Reliability Phase Change Memory (PCM) Based Non-Volatile FPGA Storage Element
The high leakage current has been one of the critical issues in SRAM-based Field Programmable Gate Arrays (FPGAs). In recent works, resistive Non-Volatile Memories (NVMs) have been utilized to tackle the issue with their superior energy efficiency and fast power-on speed. Phase Change Memory (PCM) is one of the most promising resistive NVMs with the advantages of low cost, high density and high resistance ratio. However, most of the reported PCM-based FPGAs have significant active leakage power and reliability issues. This paper presents a low active leakage power and high reliability PCM based non-volatile SRAM (nvSRAM).