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A Transmit-Receiver (T/R) switch is fabricated in a 65 nm CMOS process for WLAN 802.11g applications. By floating the triple well device, the switch achieves low insertion loss, high power handling capability and good linearity simultaneously. In the transmit mode, the switch features 0.8 dB insertion loss, 29 dBm output P1dB and less than 0.2dB EVM degradation at 24 dBm output power level. In the receive mode, it exhibits 1.6 dB insertion loss and 28dB isolation at 2.45GHz.
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