An Energy-Efficient and High-Speed Mobile Memory I/O Interface Using Simultaneous Bi-Directional Dual (Base+RF)-Band Signaling

A fully-integrated 8.4 Gb/s 2.5 pJ/b mobile memory I/O transceiver using simultaneous bi-directional dual band signaling is presented. Incorporating both RF-band and baseband transceiver designs, this prototype demonstrates an energy-efficient and high-bandwidth solution for future mobile memory I/O interface. The proposed Amplitude Shift Keying (ASK) modulator/demodulator with on-chip band-selective transformer obviates a power hungry pre-emphasis and equalization circuitry, revealing a low-power, compact and standard mobile memory-compatible solution. As mobile devices (such as smart phones) continue to enhance video processing and graphics-intensive computing capabilities, they keep demanding greater aggregate memory bandwidths, projected to reach 12.8 GB/s in the near future.

Provided by: Institute of Electrical & Electronic Engineers Topic: Mobility Date Added: Jan 2012 Format: PDF

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