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Comparision of AlGaN/GaN and AlGaAs/GaAs Based HEMT Device Under Doping Consideration

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Executive Summary

This paper presents the behaviour and characteristics of various parameters of AlGaN/GaN based HEMT under the effect of doping. The impact of n-type doping material in carrier layer of AlGaN/GaN HEMT is significantly observed on threshold voltage, transconductance, maximum drain current, cutoff frequency and capacitance. Introducing the AlGaN instead of AlGaAs produces a very significant effect: polarization. This causes accumulation of charge carriers easily on low doping. Apart from this the effect of doping is also considered on conventional AlGaAs/GaAs based HEMT.

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