Date Added: May 2010
The authors investigate error-correcting codes for the rank-modulation scheme with an application to flash memory devices. In this scheme, a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The resulting scheme eliminates the need for discrete cell levels, overcomes overshoot errors when programming cells (a serious problem that reduces the writing speed), and mitigates the problem of asymmetric errors. In this paper, they study the properties of error-correcting codes for charge-constrained errors in the rank-modulation scheme.