Storage

Design and Optimization of Nonvolatile Multibit 1T1R Resistive RAM

Free registration required

Executive Summary

CMOS technology scaling has been used to shrink device dimensions for density improvement, performance enhancement, and cost/bit reduction of flash memory arrays. However, it is becoming increasingly difficult to sustain this trend as individual CMOS devices are scaled into the nanometer regime. Hence, there has been a significant push toward identifying and exploring alternate device technologies that can potentially supplant CMOS technology in future nonvolatile memory designs. Several emerging memory technologies including Phase-change Random Access Memory (PCRAM), Magnetic RAM (MRAM), Ferroelectric RAM (FeRAM), and resistive RAM (RRAM) are being explored as potential successors.

  • Format: PDF
  • Size: 2125.77 KB