Design and Optimization of Nonvolatile Multibit 1T1R Resistive RAM

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Executive Summary

CMOS technology scaling has been used to shrink device dimensions for density improvement, performance enhancement, and cost/bit reduction of flash memory arrays. However, it is becoming increasingly difficult to sustain this trend as individual CMOS devices are scaled into the nanometer regime. Hence, there has been a significant push toward identifying and exploring alternate device technologies that can potentially supplant CMOS technology in future nonvolatile memory designs. Several emerging memory technologies including Phase-change Random Access Memory (PCRAM), Magnetic RAM (MRAM), Ferroelectric RAM (FeRAM), and resistive RAM (RRAM) are being explored as potential successors.

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