Design of Spin-Torque Transfer Magnetoresistive RAM and CAM/TCAM With High Sensing and Search Speed

Date Added: Jan 2010
Format: PDF

With a great scalability potential, nonvolatile magneto-resistive memory with Spin-Torque Transfer (STT) programming has become a topic of great current interest. This paper addresses cell structure design for STT magneto-resistive RAM, Content Addressable Memory (CAM) and TernaryCAM (TCAM). The authors propose a new RAM cell structure design that can realize high speed and reliable sensing operations in the presence of relatively poor magneto-resistive ratio, while maintaining low sensing current through Magnetic Tunneling Junctions (MTJs). They further apply the same basic design principle to develop new cell structures for nonvolatile CAM, and TCAM.