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The design of a Low Noise Amplifier (LNA) in Radio Frequency (RF) circuit requires the trade-off many importance characteristics such as gain, Noise Figure (NF), stability, power consumption and complexity). This paper aims to design and simulate a single stage LNA circuit with high gain and low Noise using MOSFET (NMOS) for frequency 2.4 GHz. A single ended LNA has successfully designed with 18.8-19.2 dB forward gain and 1.986 dB noise figure, reverse isolation more than 28 dB at the frequency of 2.4 GHz.
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