Development of Low Temperature Oxidation Process Using Ozone for VLSI

With decreasing size of MOS transistor the thickness of gate oxide (SiO2) is reaching in regime where it is just 2-3 atomic layers thick about 1 to 1.5 nm thick because of thin oxide layers there is direct tunneling of charge carriers through gate oxide, and the transport of charge carriers through defects in gate oxide. The increasing leakage current through gate oxide is proving to be a showstopper to the scaling of MOS transistor, and saturating the Moore's Law.

Provided by: International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering (IJIREEICE) Topic: Hardware Date Added: Aug 2014 Format: PDF

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