Gallium Nitride-Based RF Power Amplifiers for Future Wireless Communication Systems

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Radio Frequency (RF) High Power Amplifiers (PAs) received increasing attention as key components responsible for a sizable portion of base station cost (power loss and cooling equipment) in wireless communication systems. Thus, high power and high efficiency amplifiers with low power loss are critically needed. To meet these requirements, higher attention should be given to the employed active devices and the circuit design. This paper presents state of art in the field of RF power amplifier design for future wireless communications based on Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). Silicone Carbide (SiC) and Silicon (Si) substrates based HEMTs and their modeling procedure will be described. Implementation of the developed models for designing power amplifiers along with amplifiers realization will also be presented.