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The Metal-Ferroelectric-Metal (MFM) capacitor in the Ferroelectric Random Access Memory (FeRAM) embedded RFID chip is used in both the memory cell region and the peripheral analog and digital circuit area for capacitance parameter control. The capacitance value of the MFM capacitor is about 30 times larger than that of conventional capacitors, such as the Poly-Insulator-Poly (PIP) capacitor and the Metal-Insulator-Metal (MIM) capacitor. An MFM capacitor directly stacked over the analog and memory circuit region can share the layout area with the circuit region; thus, the chip size can be reduced by about 60%.
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