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Current higher data rate modulation and multi-carrier application systems require high-linearity and high-efficiency power amplifiers which depend on power transistors with high compression points, excellent thermal stability, and increasingly high frequency response. The Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) is a promising candidate for high power RF applications because GaN HEMT transistors exhibit very high power densities, high electron saturation velocity, high operating temperature, and high cutoff frequency compared to other technologies. In this paper, the authors report a highly linear and efficient GaN HEMT Doherty Power Amplifier (DPA).
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