Storage

Leveraging Access Locality for the Efficient Use of Multibit Error-Correcting Codes in L2 Cache

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Executive Summary

It is almost evident that SRAM-based cache memories will be subject to a significant degree of parametric random defects if one wants to leverage the technology scaling to its full extent. Although, strong multi-bit Error-Correcting Codes (ECC) appear to be a natural choice to handle a large number of random defects, investigation of their applications in cache remains largely missing arguably because it is commonly believed that multi-bit ECC may incur prohibitive performance degradation and silicon/energy cost. By developing a cost-effective L2 cache architecture using multi-bit ECC, this paper attempts to show that, with appropriate cache architecture design, this common belief may not necessarily hold true for L2 cache.

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