Mobility

Modelling of Optical Interaction in MOSFET for L Band Application

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Executive Summary

Normally off microwave devices like MOSFET are popular due to its high package density, dynamic operating range, low power consumption and sensitivity to light. In this paper, modelling of optical interaction in MOSFET is reported. Sensitivity of S parameters to the light is investigated theoretically at microwave frequency of 1- 2GHz i.e. for L band. Noise Figure is lowest in this band when computed in 1 to 10 GHz frequency range. Stability and power gain of the device depends on forward transmission coefficient, S21. Transconductance of the device increases due to optical effect which in turn increases S21. Analysis shows that there is significant optical effect on the stability and various power gains of MOSFET.

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