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Rank modulation has been recently introduced as a new information representation scheme for flash memories. Given the charge levels of a group of flash cells, sorting is used to induce a permutation, which in turn represents data. Motivated by the lower sorting complexity of smaller cell groups, the authors consider bounded rank modulation, where a sequence of permutations of given sizes are used to represent data. The authors study the capacity of bounded rank modulation under the condition that permutations can overlap for higher capacity.
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