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Parallel programming is an important tool used in flash memories to achieve high write speed. In parallel programming, a common program voltage is applied to many cells for simultaneous charge injection. This property significantly simplifies the complexity of the memory hardware, and is a constraint that limits the storage capacity of flash memories. Another important property is that cells have different hardness for charge injection. It makes the charge injected into cells differ even when the same program voltage is applied to them. In this paper, the authors study the parallel programming of flash memory cells, focusing on the above two properties.
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