Rewriting Codes for Joint Information Storage in Flash Memories

Memories whose storage cells transit irreversibly between states have been common since the beginning of the data storage technology. Examples include punch cards and digital optical discs, where a cell can change from a 0-state to a 1-state but not vice versa. In recent years, flash memories and some other nonvolatile EEPROM's based on floating-gate cells have become a very important family of such memories. They have good properties including high data density, fast reading speed, physical robustness, etc., and have been widely used in mobile, embedded as well as mass storage devices.

Provided by: Institute of Electrical & Electronic Engineers Topic: Mobility Date Added: Oct 2010 Format: PDF

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