Storage

Row Buffer Locality-Aware Data Placement in Hybrid Memories

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Executive Summary

Phase Change Memory (PCM) is a promising alternative to DRAM, though its high latency and energy costs prohibit its adoption as a drop-in DRAM replacement. Hybrid memory systems comprising DRAM and PCM attempt to achieve the low access latencies of DRAM at the large capacities of PCM. However, known solutions neglect to assess the utility of data placed in DRAM, and hence fail to achieve high performance and energy efficiency. The authors propose a new DRAM-PCM hybrid memory system that exploits row buffer locality. The main idea is to place data that cause frequent row buffer miss accesses in DRAM, and data that do not in PCM.

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