RPRAM: Exploring Redundancy Techniques to Improve Lifetime of PCM-Based Main Memory
Future main memory systems will confront the scaling challenges posed by DRAM technology and should adapt themselves to use the emerging memory technologies like Phase Change Memory (PCM, or PRAM). PCM offers advantages such as storage density, non-volatility, and lower energy consumption. However, they are constrained by limited write endurance and reduced performance. In this paper, the authors propose a novel PCM-based main memory system, rPRAM, which leverages a group of faulty pages in a managed way to significantly extend the PCM life while minimizing the performance impact. Their preliminary experiments show that rPRAM has the potential to extend the lifetime of PCM based memory comparable to existing schemes at only a negligible fraction of hardware cost.