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Filament Memories based on resistive switching have been attracting attention in recent years as a potential replacement for flash memory in CMOS technology and as a potential candidate memory for low-cost, large-area electronics. These memories operate at low voltages with fast switching speeds. These devices are based on ionic conduction through an electrolyte layer and differ fundamentally in operation from conventional flash memory, which is based on the field effect transistor. To facilitate development of this technology, effects of film structure on ionic and electronic conducting properties and the filament formation processes must be studied.
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