Taking Advantage of Within-Die Delay-Variation to Reduce Cache Leakage Power Using Additional Cache-Ways

Free registration required

Executive Summary

Leakage power, especially in cache memories, is dominating total power consumption of processor-based embedded systems. By choosing a higher threshold voltage, SRAM leakage can be exponentially reduced in return for lower speed. Since SRAM cells in the same cache have different delays in nanometer technologies due to within-die process variation, not all of the cells violate the cache delay. However, since timing-violating cells are randomly distributed over the cache, row/column redundancies are inefficient. The authors propose to add extra cache-way(s) to replace slow cache-lines separately in each cache-set.

  • Format: PDF
  • Size: 284.83 KB