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With the appealing storage-density advantage, MultiLevel-per-Cell (MLC) NAND Flash memory that stores more than 1 bit in each memory cell now largely dominates the global Flash memory market. However, due to the inherent smaller noise margin, the MLC NAND Flash memory is more subject to various device/circuit variability and noise, particularly as the industry is pushing the limit of technology scaling and a more aggressive use of MLC storage. Cell-to-cell interference has been well recognized as a major noise source responsible for raw-memory-storage reliability degradation.
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