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Although the performance of a magnetic recording read channel can be improved by employing advanced iterative signal detection and coding techniques, the method nevertheless tends to incur significant silicon area and energy consumption overhead. Motivated by recent significant improvement of high-density embedded Dynamic random Access Memory (eDRAM) towards high manufacturability at low cost, the authors explored the potential of integrating eDRAM in read channel Integrated Circuits (IC) to minimize the silicon area and energy consumption cost incurred by iterative signal detection and coding. As a result of the memory-intensive nature of iterative signal detection and coding algorithms, the silicon cost can be reduced in a straightforward manner by directly replacing conventional SRAM with eDRAM.
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