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The Scaling of MOSFET device to sub40nm is very critical because of short channel effect. The SCE is mainly due to power supply since scaling of device is more rapid as compared to The scaling of supply voltage result is the SCE, because of high electric field degrades the mobility and causes velocity saturation. The gate looses control and short channel device is controlled by both gate and drain biase, the drain voltage gives more influence to the channel potential in nano-scale MOSFET. According to ITRS road-map, a precisely controlled process flow for the incorporation of new materials in Si CMOS technology is crucial for nano-scale devices.
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