A Differential CMOS T/R Switch for Multistandard Applications

With the development of modern silicon technology, more and more high-frequency circuits can be implemented in standard CMOS processes. Radio-Frequency (RF) Integrated Circuits (ICs) in standard CMOS technology have proven feasible and the trend of System-on-Chip (SoC) requires further integration of the Transmit - Receive (T/R) antenna switch. For years, the RF switch has been dominated by discrete components using PIN diodes and III-V MESFETs. Recently, CMOS T/R switch design has been explored to a certain extent. The effect of substrate resistance on the insertion loss is studied, where low insertion loss was obtained by minimizing the substrate resistance and dc biasing the T/R nodes.