Design and Implementation of 8K-Bits Low Power SRAM in 180nm Technology
This paper explores the tradeoffs that are involved in the design of SRAM. The major components of an SRAM such as the row decoders, the memory cells and the sense amplifiers have been studied in detail. The circuit techniques used to reduce the power dissipation and delay of these components has been explored and the tradeoffs have been explained. The key to low power operation in the SRAM data path is to reduce the signal swings on the high capacitance nodes like the bitlines and the data lines. Clocked voltage sense amplifiers are essential for obtaining low sensing power, and accurate generation of their sense clock is required for high speed operation.