Provided by: edaa
Date Added: Jan 2011
Resistive Random Access Memory (ReRAM) has been demonstrated as a promising non-volatile memory technology with features such as high density, low power, good scalability, easy fabrication and compatibility to the existing CMOS technology. The conventional Three-Dimensional (3D) bipolar ReRAM design usually stacks up multiple memory layers that are separated by isolation layers, e.g. Spin-On-Glass (SOG). In this paper, the authors propose a new 3D bipolar ReRAM design with 3D Interleaved Complimentary Memory Layers (3D-ICML) which can form a memory island without any isolation.