A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications

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Provided by: MDPI AG
Topic: Hardware
Format: PDF
In this paper, the authors report a versatile nano-sensor technology using "Top-down" poly-silicon nanowire Field Effect Transistors (FETs) in the conventional Complementary Metal Oxide Semiconductor (CMOS) compatible semiconductor process. The nano-wire manufacturing technique reduced the nano-wire width scaling to 50nm without use of extra lithography equipment and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100mV/pH) and sensitive Deoxyribo-Nucleic Acid (DNA) detection ability (100pM) at normal system operation voltages.
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