A Comparative Study of 6T, 8T and 9T SRAM Cell

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Provided by: International Journal of Latest Trends in Engineering and Technology (IJLTET)
Topic: Hardware
Format: PDF
From last 5 decades, the authors are scaling down the CMOS devices to achieve the better performance in terms of speed, power dissipation, size and reliability. Their focus is to make the general use device like computer more compact in terms of size, better speed, less power consumption and so they are moving towards the new technology. That can be done by making memories compact and faster and so the scaling CMOS is done to attain high speed and decrease size of memory i.e. SRAM. Due to scaling of device they are facing new challenges day-by-day like oxide thickness fluctuation, intrinsic parameter fluctuation.
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