Delft University of Technology
Aggressive technology scaling has led to a significant reduction of device reliability. As a consequence Integrated Circuits (ICs) reliability became a major issue and Dynamic Reliability Management (DRM) schemes have been proposed to assure ICs' lifetime reliability. Though, up to date, various aging sensors have been proposed, few of them can provide real quantitative aging measurements. In this paper, the authors propose a direct measuring scheme by using the drain current as aging indicator. They designed a novel on-chip aging sensor able to detect the amalgamated aging effects of ICs caused by joint failure mechanisms.