A Discussion on RTN Variation Tolerant Guard Band Design Based on Approximation Models of Long-Tail Distributions for Nano-Scaled SRAM Screening Test

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Provided by: International Journal of Computer and Electrical Engineering (IJCEE)
Topic: Storage
Format: PDF
In this paper the authors discuss for the first time, how the Guard Band (GB) designs for the screening-test should be unprecedentedly changed when the shifting amounts of voltage-margin of the post-screening becomes larger than that of pre-screening. Three different types of amplitude-ratios of RTN to RDF (RTN/RDF: 0.25, 1, 4) are assumed in this discussion. The screening yield-loss impacts, made by: larger ratio of RTN/RDF and approximation-error of longer tailed RTN distribution are discussed.
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