The International Journals of Engineering & Sciences (IJENS)
In this paper, a dual-band, multi-standard, concurrent, low noise amplifier operating in the 2.45/5.25GHz bands is presented. The amplifier design is based on an ultra-low noise transistor connected in the common source configuration with inductive degeneration. The proposed amplifier stability is ensured using a series gate resistor and small inductive source degeneration in the form of etched transmission lines on the substrate. To enhance the fractional bandwidth, a capacitor is inserted between the gate and source terminals allowing fractional bandwidths of 52% and 15% at the lower and higher bands, respectively.