Advances in Computer Science : an International Journal (ACSIJ)
The authors study the I-V characteristics of single gate junction-less Field Effect Transistor (FET) by device simulation. The sample FET is simulated at different channel lengths and the I-V curve changes due to variations of and channel length have been systematically analyzed. The new approach exhibited here utilizes a genetic algorithm to select the important physical and heuristic elements in order to define a compact yet precision model for single gate junction-less field effect transistor characteristic. The results show that the Mean Absolute Percent Error (MAPE), Root-Mean Square Deviation (RMSD) and Standard Deviation Error (SDE) were at an acceptable level.