A Dynamic Simulation on Single Gate Junctionless Field Effect Transistor Based on Genetic Algorithm

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Provided by: Advances in Computer Science : an International Journal (ACSIJ)
Topic: Hardware
Format: PDF
The authors study the I-V characteristics of single gate junction-less Field Effect Transistor (FET) by device simulation. The sample FET is simulated at different channel lengths and the I-V curve changes due to variations of and channel length have been systematically analyzed. The new approach exhibited here utilizes a genetic algorithm to select the important physical and heuristic elements in order to define a compact yet precision model for single gate junction-less field effect transistor characteristic. The results show that the Mean Absolute Percent Error (MAPE), Root-Mean Square Deviation (RMSD) and Standard Deviation Error (SDE) were at an acceptable level.
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