Journal of Semiconductor Technology and Science (JSTS)
It is progressing as new advents and remarkable developments of mobile device every year. On the upper line reason, NAND flash large density memory demands which can be stored into portable devices have been dramatically increasing. Therefore, the cell size of the NAND flash memory has been scaled down by merely 50% and has been doubling density each per year. However, side effects have arisen the cell distribution and reliability characteristics related to coupling interference, channel disturbance, floating gate electron retention, write-erase cycling owing to shrinking around 20nm technology.