Within the complex of information technology industries, the semiconductor industry plays an extremely important role as provider of the building blocks for IT products and systems. As the semiconductor technology progresses, transistor's leakage current increases significantly, which cause SRAM performance degraded dramatically. Current Sense Amplifier (SA) always achieves higher performance than the traditional voltage-type counterworker. Therefore, a new current-mode sense amplifier combined with leakage current compensation circuit for high-performance SRAM is proposed in this paper. Simulation results demonstrate that, compared to the traditional design, the delay can be reduced by 42.9%.