International Journal of Computing and Technology (IJCAT)
SRAM (Static Random-Access Memory) occupies two-third area of VLSI (Very Large Scale Integration) chips, therefore it dominates the total power consumption. To enhance the performance of these chips, SRAM cell should meet the requirement of lesser power consumption. This paper presents a new 8T SRAM cell that is efficient in Dynamic power consumption in Write mode and Leakage power consumption when compared with referred 9T SRAM cell and standard 6T SRAM cell. The design is simulated in 45-nm CMOS (Complementary Metal-Oxide-Semiconductor) technology that results 18.6% reduction in dynamic power consumption during Write mode and 28.4 % reduction in Leakage power consumption as compared to referred 9T SRAM cell.