A Nano-Power Switched-Capacitor Voltage Reference Using MOS Body Effect for Applications in Subthreshold LSI

Provided by: Journal of Semiconductor Technology and Science (JSTS)
Topic: Hardware
Format: PDF
A nano-power CMOS voltage reference is proposed in this paper. Through a combination of switched-capacitor technology with the body effect in MOSFETs, the output voltage is defined as the difference between two gate-source voltages using only a single PMOS transistor operated in the sub-threshold region, which has low sensitivity to the temperature and supply voltage. A low output, which breaks the threshold restriction, is produced without any subdivision of the components and flexible trimming capability can be achieved with a composite transistor, such that the chip area is saved.

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