A PVT-Compensation Scheme for Subthreshold SRAM

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Provided by: AICIT
Topic: Storage
Format: PDF
In this paper, a Process, Voltage and Temperature (PVT) compensation scheme is proposed for sub-threshold SRAM. Simulation results demonstrated that by adopting the proposed design, the average access time is decreased by 64.4% and the standard deviation is reduced to 17.3%, which can relief the impacts of the PVT variations on the sub-threshold SRAM effectively and shorten the cycle time consequently. Meanwhile, the average energy per cycle dissipated in this design is only 24.34% of the design without compensation, and the energy penalty caused by the PVT circuit is only 4.38%, so that the energy efficiency can be improved significantly.
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