A Silicon LDMOS Based RF Power Amplifier for Wireless Base Station Applications
Radio frequency power amplifier is one of the essential modules in the transmission chain of wireless base stations. There is always a trade-off exists between power efficiency and linearity of the power amplifier. The design of power amplifier using LDMOS based active devices will give cost-effective solution. This paper presents the design of a class A power amplifier for unlicensed ISM band wireless base station requirements. The design is carried out using Si-LDMOS (Silicon - Laterally Diffused Metal Oxide Semiconductor) technology and is built on Epoxy-FR4 (Flame Retardant, woven glass reinforced epoxy resin) board with a dielectric constant of 4.6 and substrate thickness of 1.6mm.