Adapting Voltage Ramp-up Time for Temperature Noise Reduction on Memory-based PUFs

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Provided by: Institute of Electrical & Electronic Engineers
Topic: Hardware
Format: PDF
The efficiency and cost of silicon PUF-based applications, and in particular key generators, are heavily impacted by the level of reproducibility of the bare PUF responses under varying operational circumstances. Error-correcting codes can be used to achieve near-perfect reliability, but come at a high implementation cost especially when the underlying PUF is very noisy. When designing a PUF-based key generator, a more reliable PUF will result in a less complex ECC decoder and a smaller PUF footprint, hence an overall more efficient implementation. This paper proposes a novel insight and resulting technique for reducing noise on memory-based PUF responses, based on adapting supply voltage ramp-up time to ambient temperature.
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