International Journal of Advanced Research in Computer Engineering & Technology
A review on different adiabatic approach for the 8t SRAM cell is presents in this paper. In this paper, 8T SRAM cell to perform the write and read operations which employs a single bit line scheme. An SRAM is considering in the most development stage today, with its different variations as well as to support low power application. Stability factor and leakage power is becoming the most important factor on SRAM (Static Random Access Memory) cells.