Analog Performance of Nanoscale Germanium-on-Insulator PMOSFETs

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Provided by: IRD India
Topic: Hardware
Format: PDF
In this paper, the authors present a non-charge sheet approach to calculate the drain current based on accurate computation of 2D surface potential taking into account the influence of the fixed charge and interface-trapped charge densities for fully depleted GeOI p-MOSFETs. An effective carrier concentration depending on the bias conditions is introduced to compute the drain current including the effect of volume inversion. The present model embraces non-ideal effects like channel length modulation, velocity saturation, etc. extending its validity in the nano-scale regime.
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