Analysis of Electrical Behavior of SOI LDMOSFET with Respect to Temperature and Doping Using T-CAD Simulator

Provided by: Interscience Open Access Journals
Topic: Hardware
Format: PDF
In this paper, the effect of temperature variation and doping variation of p-body on various parameters like breakdown voltage, on resistance, drain leakage current, threshold voltage, etc. of SOI laterally diffused MOSFET has been analyzed. Since, power MOSFET is designed for radio frequency power amplifiers which are used in wireless system-on-chip applications. The device is fabricated on a thin-film SOI wafer in order to reduce the leakage current and also prohibit the formation of parasitic diode with substrate.

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