Journal of Semiconductor Technology and Science (JSTS)
In this paper, the authors investigate the sub-threshold behavior of Fin Field Effect Transistor (FinFET). The FinFET is considered to be an alternate MOSFET structure for the deep sub-micron regime, having excellent device characteristics. As the channel length decreases, the study of sub-threshold behavior of the device becomes critically important for successful design and implementation of digital circuits. An accurate analysis of sub-threshold behavior of FinFET was done by simulating the device in a 3D process and device simulator, Taurus.