Analysis of the Impact of Spatial and Temporal Variations on the Stability of SRAM Arrays and the Mitigation Technique Using Independent-Gate Devices

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Provided by: Reed Business Information
Topic: Storage
Format: PDF
As planar MOSFET is approaching its physical scaling limits, FinFET becomes one of the most promising alternative structures to keep on the industry scaling-down trend for future technology generations of 22nm and beyond. In this paper, the authors investigate the influence of NBTI degradation induced variation and random process variations on the stability of the FinFET-based 6T-SRAM cell. The contributions of transistor threshold voltage variation Vth on the stability of the SRAM cell and the corresponding compensating bias schemes are thoroughly examined by means of SPICE simulations.
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