Journal of Semiconductor Technology and Science (JSTS)
The classical planar MOSFET is approaching its scaling limit due to tunneling current through the ultrathin gate oxide. Threshold voltage is one of the most important factors in a device modeling. In this paper, analytical method to calculate threshold voltage for Recessed Channel (RC) MOSFETs is studied. If the authors know the fundamental parameter of device, such as radius, oxide thickness and doping concentration, threshold voltage can be obtained easily by using this model. The model predicts the threshold voltage which is the result of 2D numerical device simulation.