International Journal of Emerging Technology and Advanced Engineering (IJETAE)
This paper presents an quasi-2D model for the threshold voltage of partially depleted SOI (Silicon-On-Insulator) MOSFET in contrast with effective channel length down to deep - sub micrometer range. The paper present analytical solution with the help of 2D potential distribution in the silicon film and with the help of power series expansion method. The newly adopted approach helps to improve the accuracy of the model, to extend pseudo 2D approach to SOI devices. The good results are obtained between the model and the 2D numerical analysis, the scaling of the devices has been done to deep sub micrometer range. To analyze the device architecture, characteristics and performance the SILVACO and MATLAB simulation tool is used.