Area Dependent Low Frequency Noise in Metal Oxide Based Resistive Random Access Memory

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Provided by: International Journal of Information and Electronics Engineering
Topic: Hardware
Format: PDF
Metal-oxide based Resistance Random Access Memory (RRAM) has been extensively studied as one of the most promising candidate for next generation non-volatile memory; however, the current conduction mechanism is not yet clearly understood. To tackle this problem, low frequency noise behavior in metal-oxide based RRAM device has been investigated in this paper. Together with DC current voltage characteristics, it confirms that for the low resistance state, current conduction is localized without area dependence, whereas, for the high resistance state, it is a uniform leakage current throughout the whole device area.
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